| PART |
Description |
Maker |
| DTB543ZM DTB543ZE |
-500mA / -12V Low VCE (sat) Digital transistors (with built-in resistors)
|
ROHM[Rohm]
|
| DTB523YE DTB523YE10 DTB523YM |
-500mA / -12V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
| 2DA2018 |
12V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR
|
Diodes
|
| 2SA1735 |
Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -500mA) Small Flat Package
|
TY Semiconductor Co., Ltd
|
| ENN7483 |
Bipolar Transistor, -12V, -1A, Low VCE(sat) PNP Single MCPH3
|
ON Semiconductor
|
| NSS12600CF8 |
12V 6A LOW VCE(sat) PNP High Current Transistor ChipFET™
|
ON Semiconductor
|
| 2SA1385-Z |
Low VCE(sat):VCE(sat)=-0.18 V TYP.Collector-base voltage VCBO -60 V
|
TY Semiconductor Co., Ltd
|
| NSV40200LT1G NTB75N03L09T4G NSV1C300ET4G NTD2955PT |
40 V, 4.0 A, Low VCE(sat) PNP Transistor
Power MOSFET 75 Amps, 30 Volts
100 V, 3.0 A, Low VCE(sat) PNP Transistor
|
ON Semiconductor
|
| NSS30201MR6T1G |
30V, 3A, Low VCE(sat) NPN Transistor(30V, 3A, 低VCE(sat) NPN晶体 2000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
30 V, 3 A, Low VCE(sat) NPN Transistor
|
ONSEMI[ON Semiconductor]
|
| NSS35200MR6T1G |
35 V, 5 A, Low VCE(sat) PNP Transistor(35V, 5A, 浣?CE(sat) PNP?朵?绠?
35 V, 5 A, Low VCE(sat) PNP Transistor(35V, 5A, 低VCE(sat) PNP晶体
|
ONSEMI[ON Semiconductor]
|
| NSS40600CF8T1G_07 NSS40600CF8T1G NSS40600CF8T1G07 |
40 V, 7.0 A, Low VCE(sat) PNP Transistor(40V, 7.0A, 低VCE(sat) PNP晶体
|
ONSEMI[ON Semiconductor]
|
| IXGT31N60D1 IXGH31N60D1 |
Ultra-Low VCE(sat) IGBT with Diode(VCES00V，VCE(sat).7V的绝缘栅双极晶体带二极管)) 60 A, 600 V, N-CHANNEL IGBT, TO-247AD
Ultra-Low V IGBT with Diode
|
IXYS, Corp.
IXYS Corporation
|
